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| CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8 MTN1N65I3 Description BVDSS : 700V @Tj=150 RDS(ON) : 9.5 ID : 1.0A The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features * BVDSS=700V typically @ Tj=150 * Simple Drive Requirement * Low Gate Charge * Fast Switching Characteristic * RoHS compliant package Applications * Cell phone charger * Standby power Symbol MTN1N65I3 Outline TO-251 GGate DDrain SSource G B DS C MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25C) Parameter Symbol Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 2/8 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25) Total Power Dissipation (TC=25) Linear Derating Factor Operating Junction and Storage Temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=1.0A, VDD=50V, L=80mH, RG=25, starting TJ=+25. 3. ISD1.0A, dI/dt100A/s, VDDBVDSS, starting TJ=+25. VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg 650 30 1.0 0.6 4.0 43 1.0 2.8 4.5 300 1.5 28 0.2 -55~+150 V V A A A mJ A mJ V/ns C W W W/C C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 4.46 83.3 Unit C/W C/W MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (TC=25C, unless otherwise specified) Symbol Static BVDSS BVDSS BVDSS/Tj BVDS VGS(th) *GFS IGSS IDSS 650 2.0 700 0.5 700 5 4.5 0.9 1.3 22.5 27 11.5 27 150 20 4.3 160 0.59 4.0 100 1 10 9.5 6.7 1.3 1.9 225 30 6.4 1.5 1.0 4.0 V V V/C V V S nA A A Min. Typ. Max. Unit Test Conditions Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 3/8 *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - VGS=0, ID=250A, Tj=25 VGS=0, ID=250A, Tj=150 Reference to 25C, ID=250A VGS=0, ID=1.0A VDS = VGS, ID=250A VDS =15V, ID=0.5A VGS=30 VDS =650V, VGS =0 VDS =520V, VGS =0, TC=125C VGS =10V, ID=0.5A nC ID=1A, VDD=300V, VGS=10V VDD=300V, ID=1A, VGS=10V, RG=25, RD=300 ns pF VGS=0V, VDS=25V, f=1MHz V A ns C IS=1.0A, VGS=0V VGS=0, IF=1A, dI/dt=100A/s *Pulse Test : Pulse Width 300s, Duty Cycle2% Ordering Information Device MTN1N65I3 Package TO-251 (RoHS compliant) Shipping 50 pcs / tube, 80 tubes / box Marking 1N65 MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 4/8 MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 5/8 MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Test Circuits and Waveforms Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 6/8 MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Test Circuits and Waveforms(Cont.) Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 7/8 MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension Marking: A B C D F 3 I E K 2 1 J H G Product Name Date Code Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 8/8 1N65 Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0472 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.20 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: KFC; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN1N65I3 CYStek Product Specification |
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